![Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/6d4d783a3a176210e547c38adc262ebdc910c682/2-Figure2-1.png)
Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
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Relationship between energy and Dit of (a) 10-nm-thick Al2O3, Y2O3,... | Download Scientific Diagram
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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation | Semantic Scholar
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Relationship between Eox andNst of (a) 10-nm-thick Al2O3, Y2O3, HfO2... | Download Scientific Diagram
Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices - Researcher | An App For
![Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/6d4d783a3a176210e547c38adc262ebdc910c682/3-Figure3-1.png)
Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
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